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US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Bit-line sense amplifier and semiconductor memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,810, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Bit-line sense amplifier and semiconductor mem... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Nov. 3 for "Sense amplifier circuit having bitline sense amplifers and equalizing circuit and semiconductor memory device including the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,811, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Sense amplifier circuit having bitline sense a... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Memory precharge" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,812, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory precharge" was invented by Chi... Read More


US Patent Issued to WINBOND ELECTRONICS on Nov. 3 for "Semiconductor memory device and control method thereof forsetting voltage of bit line" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,813, issued on Nov. 3, was assigned to WINBOND ELECTRONICS CORP. (Taichung City, Taiwan). "Semiconductor memory device and control method th... Read More


US Patent Issued to Intel on Nov. 3 for "Register file arrays with multiplexed read path circuitry" (Oregon, Texas, North Carolina Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,814, issued on Nov. 3, was assigned to Intel Corp. (Santa Clara, Calif.). "Register file arrays with multiplexed read path circuitry" was in... Read More


US Patent Issued to Kioxia on Nov. 3 for "NAND flash memory executing high-speed mode read operation" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,815, issued on Nov. 3, was assigned to Kioxia Corp. (Tokyo). "NAND flash memory executing high-speed mode read operation" was invented by To... Read More


US Patent Issued to SK hynix on Nov. 3 for "Memory device for performing read operation and program verification operation" (South Korean Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,816, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Memory device for performing read operation and program ve... Read More


US Patent Issued to International Business Machines on Nov. 3 for "Nor decoder for large decode structures" (New York Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,817, issued on Nov. 3, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Nor decoder for large decode structures" was i... Read More


US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Circuits and methods for reducing memory power consumption" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,818, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Circuits and methods for reducing mem... Read More


US Patent Issued to Nuvoton Technology Corporation Japan on Nov. 3 for "Semiconductor memory device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,819, issued on Nov. 3, was assigned to Nuvoton Technology Corporation Japan (Kyoto, Japan). "Semiconductor memory device" was invented by At... Read More